Product Details Search Results:
Toshiba.co.jp/SSM3J109TU(TE85L)
{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 20 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"4 S / 2.4 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 2 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"175 mOhms","Package / Case":"UFM-3","Vgs - Gate-Source Breakdown Voltage":"8 V"...
1549 Bytes - 14:38:49, 15 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| SSM3J109TU.pdf | 0.20 | 1 | Request |
