NP80N03EDE 80 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From Renesas Electronics
Status | DISCONTINUED |
Avalanche Energy Rating (Eas) | 400 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 80 A |
Drain-source On Resistance-Max | 0.0110 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | MP-25ZJ, TO-263, 3 PIN |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 1.8 W |
Pulsed Drain Current-Max (IDM) | 320 A |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |