NP80N03EDE
80 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

From Renesas Electronics

StatusDISCONTINUED
Avalanche Energy Rating (Eas)400 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)80 A
Drain-source On Resistance-Max0.0110 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionMP-25ZJ, TO-263, 3 PIN
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.8 W
Pulsed Drain Current-Max (IDM)320 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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