3SK222-V22-A
VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET

From Renesas Electronics

StatusDISCONTINUED
Channel TypeN-CHANNEL
ConfigurationSINGLE
Drain Current-Max (ID)0.0250 A
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)0.0300 pF
Highest Frequency BandVERY HIGH FREQUENCY BAND
Lead FreeYes
Number of Elements1
Number of Terminals4
Operating ModeDUAL GATE, DEPLETION
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max0.2000 W
Power Gain-Min (Gp)21 dB
Surface MountYes
Terminal FinishTIN BISMUTH
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF SMALL SIGNAL

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