3SK222-V22-A VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
From Renesas Electronics
Status | DISCONTINUED |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
Drain Current-Max (ID) | 0.0250 A |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 0.0300 pF |
Highest Frequency Band | VERY HIGH FREQUENCY BAND |
Lead Free | Yes |
Number of Elements | 1 |
Number of Terminals | 4 |
Operating Mode | DUAL GATE, DEPLETION |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 0.2000 W |
Power Gain-Min (Gp) | 21 dB |
Surface Mount | Yes |
Terminal Finish | TIN BISMUTH |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | AMPLIFIER |
Transistor Element Material | SILICON |
Transistor Type | RF SMALL SIGNAL |