MS1202 General Purpose Tunnel Diode
From Raytheon Electronics
Status | Discontinued |
C(t) Max.(F) Total Capacitance | 1.0p |
Ipeak Max. (A) | 1.5m |
L(s) Max.(H),Series Inductance | .10n |
Military | N |
Package | Pill-C |
Peak Current Tol. (A) | .15m |
R(neg) (Ohms) Negative Res. | 75 |
Ratio Ipeak/Ivalley Min. | 6.0 |
Semiconductor Material | Germanium |
V(P) (V) Peak-Point Voltage | 80m |
V(V) (V) Valley-Point Voltage | 300m |
V(f)(V) Forward Voltage @Ipeak | 500m |
V(n) (V) Noise Voltage | 73m |
f(co) (Hz) Res. Cutoff Freq | 10G |
r(s) Max. (Ohms) Series Res. | 5.0 |