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Toshiba.semicon-storage.com/RN2106ACT(TPL3)
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"80mA","Product Photos":"CST3","Package / Case":"SC-101, SOT-883","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 10mA, 5V","Frequency - Transition":"-","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"RN2101ACT-06ACT -","Resistor - Emitter Base (R2) (Ohms)":"47k","Standard Package":"1","Transistor Type":"PNP - Pre-Biased","Family":"Transistors (BJT) - Single, Pre-Biased","Vce Saturation (Max) @ Ib, Ic":"150mV @ 25...
1962 Bytes - 10:26:14, 15 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| RN2106ACT.pdf | 0.19 | 1 | Request |
