V58C2256164SAT5B
16M X 16 DDR DRAM, 0.65 ns, PDSO66

From PROMOS TECHNOLOGIES INC

StatusActive
Access ModeFOUR BANK PAGE BURST
Access Time-Max0.6500 ns
Additional FeatureAUTO/SELF REFRESH
Clock Frequency-Max (fCLK)200 MHz
I/O TypeCOMMON
Interleaved Burst Length2,4,8
JESD-30 CodeR-PDSO-G66
Length22.22 mm
Memory Density2.68E8 bit
Memory IC TypeDDR DRAM
Memory Width16
Mfr Package Description0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66
Moisture Sensitivity LevelNOT SPECIFIED
Number of Functions1
Number of Ports1
Number of Terminals66
Number of Words1.68E7 words
Number of Words Code16M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization16MX16
Output Characteristics3-STATE
Package Body MaterialPLASTIC/EPOXY
Package CodeTSSOP
Package Equivalence CodeTSSOP66,.46
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel)NOT SPECIFIED
Power Supplies (V)2.6
Qualification StatusCOMMERCIAL
Refresh Cycles8192
Seated Height-Max1.2 mm
Sequential Burst Length2,4,8
Sub CategoryDRAMs
Supply Voltage-Max (Vsup)2.7 V
Supply Voltage-Min (Vsup)2.5 V
Supply Voltage-Nom (Vsup)2.6 V
Surface MountYES
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal Pitch0.6500 mm
Terminal PositionDUAL
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
Width10.16 mm

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