2SB1250P PNP Darlington Transistor
From Panasonic
| @I(B) (A) (Test Condition) | 2m |
| @I(C) (A) (Test Condition) | 2 |
| @V(CBO) (V) (Test Condition) | 100 |
| @V(CE) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 2 |
| I(C) Abs.(A) Collector Current | 3 |
| I(CBO) Max. (A) | 100u |
| Military | N |
| Package | SOT-186 |
| Semiconductor Material | Silicon |
| V(BR)CBO (V) | 100 |
| V(BR)CEO (V) | 80 |
| V(CE)sat Max.(V) | 3.0 |
| f(T) Min. (Hz) Transition Freq | 20M |
| h(FE) Max. Current gain. | 30k |
| h(FE) Min. Static Current Gain | 8k |
| t(f) Max. (s) Fall time. | 1.8u |
| t(on) Max. (s) Turn-On Time | 1.0u |
| t(s) Max. (s) Storage time. | 0.8u |
