BP103-3/4-Z
Phototransistor Chip Silicon 850nm 3-Pin TO-18

From OSRAM OPTO SEMICONDUCTORS

Peak Wavelength850(nm)
Collector Current (DC) 0.1(A)
Collector Current (DC) (Max)0.1 A
Collector-Emitter Sat Volt (max)0.15(V)
Collector-Emitter Voltage35(V)
Dark Current50(nA)
Fall Time7000/9000(ns)
Half-Intensity Angle110(deg)
Lens TypeTransparent
Light Current600/950(uA)
MountingThrough Hole
Number of Elements1
Operating Temp Range-40C to 80C
Operating Temperature ClassificationCommercial
Package TypeTO-18
Peak Wavelength850(nm)
Phototransistor Type Phototransistor
Pin Count3
PolarityNPN
Power Dissipation0.15(W)
Rad HardenedNo
Rise Time7000/9000(ns)

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