2SK2011-RB 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
From ON Semiconductor L.L.C.
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 250 V |
| Drain Current-Max (ID) | 12 A |
| Drain-source On Resistance-Max | 0.3500 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | TO-220, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | DEPLETION |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 48 A |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
