2SB633E
Si PNP Power BJT

From Sanyo Semiconductor

@I(C) (A) (Test Condition)1.0
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)40
I(C) Abs.(A) Collector Current6.0
I(CBO) Max. (A)100u
MilitaryN
PackageTO-220AB
V(BR)CBO (V)100
V(BR)CEO (V)85
f(T) Min. (Hz) Transition Freq15M
h(FE) Max. Current gain.200
h(FE) Min. Static Current Gain100

External links