2SB631KE
Si PNP Power BJT

From Sanyo Semiconductor

@I(C) (A) (Test Condition)50m
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)8.0
I(C) Abs.(A) Collector Current1.0
I(CBO) Max. (A)1.0u
MilitaryN
PackageTO-126
V(BR)CBO (V)120
V(BR)CEO (V)120
f(T) Min. (Hz) Transition Freq110M
h(FE) Max. Current gain.200
h(FE) Min. Static Current Gain100

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