PEMD6,115 TRANS PREBIAS NPN/PNP SOT666
From NXP Semiconductors
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Datasheets | PEMD6,PUMD6 |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Other Names | 934056709115 PEMD6 T/R PEMD6 T/R-ND |
| Package / Case | SOT-563, SOT-666 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 300mW |
| Product Photos | SOT666 |
| Resistor - Base (R1) (Ohms) | 4.7k |
| Resistor - Emitter Base (R2) (Ohms) | - |
| Series | - |
| Standard Package | 4,000 |
| Supplier Device Package | SOT-666 |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
