PEMB9,115 TRANS 2PNP PREBIAS 0.3W SOT666
From NXP Semiconductors
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |
| Datasheets | PEMB9,PUMB9 |
| Family | Transistors (BJT) - Arrays, Pre-Biased |
| Featured Product | NXP - I²C Interface |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Online Catalog | PNP Pre-Biased Transistor Arrays |
| Other Names | 568-6458-6 |
| PCN Design/Specification | Resin Hardener 02/Jul/2013 |
| PCN Packaging | Lighter Reels 02/Jan/2014 |
| Package / Case | SOT-563, SOT-666 |
| Packaging | Digi-Reel® |
| Power - Max | 300mW |
| Product Photos | SOT666 |
| Resistor - Base (R1) (Ohms) | 10k |
| Resistor - Emitter Base (R2) (Ohms) | 47k |
| Series | - |
| Standard Package | 1 |
| Supplier Device Package | SOT-666 |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
