PDTD113ET,215 TRANS PREBIAS NPN 250MW TO236AB
From NXP Semiconductors
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Datasheets | PDTD113E Series |
| Family | Transistors (BJT) - Single, Pre-Biased |
| Frequency - Transition | - |
| Mounting Type | Surface Mount |
| Online Catalog | NPN Pre-biased Transistors |
| Other Names | 568-11949-2-ND 568-12311-2 934058975215 PDTD113ET T/R PDTD113ET T/R-ND PDTD113ET,215-ND |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 250mW |
| Product Photos | SOT-23-3 |
| Resistor - Base (R1) (Ohms) | 1k |
| Resistor - Emitter Base (R2) (Ohms) | 1k |
| Series | - |
| Standard Package | 3,000 |
| Supplier Device Package | SOT-23 |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
