PBRN113ET,215
TRANS PREBIAS NPN 250MW TO236AB

From NXP Semiconductors

CategoryDiscrete Semiconductor Products
Current - Collector (Ic) (Max)600mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 300mA, 5V
DatasheetsPBRN113E Series
FamilyTransistors (BJT) - Single, Pre-Biased
Frequency - Transition-
Mounting TypeSurface Mount
Online CatalogNPN Pre-biased Transistors
Other Names568-7254-2 934058984215 PBRN113ET T/R PBRN113ET T/R-ND PBRN113ET,215-ND PBRN113ET215
PCN Design/SpecificationResin Hardener 02/Jul/2013
PCN PackagingLighter Reels 02/Jan/2014
Package / CaseTO-236-3, SC-59, SOT-23-3
PackagingTape & Reel (TR)
Power - Max250mW
Product PhotosSOT-23-3
Resistor - Base (R1) (Ohms)1k
Resistor - Emitter Base (R2) (Ohms)1k
Series-
Standard Package3,000
Supplier Device PackageSOT-23 (TO-236AB)
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic1.15V @ 8mA, 800mA
Voltage - Collector Emitter Breakdown (Max)40V

External links