BUK9237-55A
32 A, 55 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

From NXP

StatusACTIVE
Avalanche Energy Rating (Eas)76 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55 V
Drain Current-Max (ID)32 A
Drain-source On Resistance-Max0.0380 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionPLASTIC, TO-252, SC-63, DPAK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)129 A
Surface MountYes
Terminal FinishTIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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