BC846S,125
Bipolar Transistors - BJT Dual NPN 65V 100mA 200mW 100MHz

From NXP Semiconductors

BrandNXP Semiconductors
Collector- Emitter Voltage VCEO Max65 V
ConfigurationDual
DC Collector/Base Gain hfe Min110
Emitter- Base Voltage VEBO6 V
Factory Pack Quantity3000
Gain Bandwidth Product fT100 MHz
ManufacturerNXP
Mounting StyleSMD/SMT
Package / CaseSOT-363
PackagingReel
Pd - Power Dissipation200 mW
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityNPN

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