IXA20I1200PB
IGBT Single Transistor, 33 A, 1.8 V, 130 W, 1.2 kV, TO-220AB, 3

From IXYS SEMICONDUCTOR

Collector Emitter Voltage V(br)ceo:1.2 kV
Collector Emitter Voltage Vces:1.8 V
DC Collector Current:33 A
MSL:-
No. of Pins:3
Operating Temperature Max:150 °C
Operating Temperature Min:-55 °C
Power Dissipation Pd:130 W
SVHC:To Be Advised
Transistor Case Style:TO-220AB
Transistor Type:IGBT

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