NTE466 JFET Transistor, Junction Field Effect, JFET, -40 V, 50 mA, -10 V, TO-18
From NTE ELECTRONICS
Breakdown Voltage Vbr: | -40 V |
Gate-Source Cutoff Voltage Vgs(off) Max: | -10 V |
MSL: | - |
No. of Pins: | 3 |
Power Dissipation Pd: | 360 mW |
SVHC: | No SVHC (17-Dec-2014) |
Transistor Case Style: | TO-18 |
Transistor Type: | JFET |
Zero Gate Voltage Drain Current Idss Max: | - |
Zero Gate Voltage Drain Current Idss Min: | 50 mA |
Zero Gate Voltage Drain Current Idss: | 50mA |