Product Datasheet Search Results:

NSG30620.pdf1 Pages, 25 KB, Scan
NSG30620
Microsemi Corp.
20 A, 600 V, N-CHANNEL IGBT, TO-257
NSG30620A.pdf1 Pages, 25 KB, Scan
NSG30620A
Microsemi Corp.
20 A, 600 V, N-CHANNEL IGBT, TO-257
NSG30620.pdf1 Pages, 26 KB, Original
NSG30620
New England Semiconductor
Insulated Gate Bipolar Transistor
NSG30620A.pdf1 Pages, 26 KB, Original
NSG30620A
New England Semiconductor
Insulated Gate Bipolar Transistor

Product Details Search Results:

Microsemi.com/NSG30620
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","Collector-emitter Voltage-Max":"600 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"20 A","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...
1123 Bytes - 18:39:39, 30 November 2024
Microsemi.com/NSG30620A
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Channel Type":"N-CHANNEL","Terminal Form":"PIN/PEG","Package Style":"FLANGE MOUNT","Collector-emitter Voltage-Max":"600 V","Transistor Element Material":"SILICON","Collector Current-Max (IC)":"20 A","Terminal Position":"SINGLE","Transistor Type":"INSULATED GATE BIPOLAR","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Number of Terminals":"3","Number of Elements":"1"}...
1127 Bytes - 18:39:39, 30 November 2024

Documentation and Support

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