RM1200DB-66S
1200 A, 3300 V, SILICON, RECTIFIER DIODE

From Mitsubishi Electric & Electronics USA, Inc.

StatusACTIVE
ApplicationHIGH VOLTAGE HIGH POWER
Average Forward Current-Max1200 A
Case ConnectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS
Diode Element MaterialSILICON
Diode TypeRECTIFIER DIODE
Mfr Package DescriptionMODULE-4
Non-rep Pk Forward Current-Max9600 A
Number of Elements2
Number of Phases1
Number of Terminals4
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Rep Pk Reverse Voltage-Max3300 V
Reverse Recovery Time-Max0.7500 us
Terminal FormUNSPECIFIED
Terminal PositionUPPER

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