RD02MUS1B-101,T112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
From Mitsubishi Electric & Electronics USA, Inc.
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 30 V |
| Drain Current-Max (ID) | 1.5 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| Mfr Package Description | ROHS COMPLIANT PACKAGE-10 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | QUAD |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Type | RF POWER |
