MGF0918A-03 S BAND, GaAs, N-CHANNEL, RF POWER, JFET
From Mitsubishi Electric & Electronics USA, Inc.
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 10 V |
| Drain Current-Max (ID) | 0.1500 A |
| FET Technology | JUNCTION |
| Highest Frequency Band | S BAND |
| Mfr Package Description | HERMETIC SEALED, SMD, 3 PIN |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | DEPLETION |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Power Dissipation Ambient-Max | 3 W |
| Surface Mount | Yes |
| Terminal Form | NO LEAD |
| Terminal Position | QUAD |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF POWER |
