UM6601CR
100 V, SILICON, PIN DIODE

From Microsemi Corp.

StatusACTIVE
ApplicationATTENUATOR; SWITCHING
Breakdown Voltage-Min100 V
Case ConnectionANODE
ConfigurationSINGLE
Diode Capacitance-Max0.4000 pF
Diode Element MaterialSILICON
Diode Forward Resistance-Max2.5 ohm
Diode TypePIN DIODE
Frequency BandULTRA HIGH FREQUENCY
Minority Carrier Lifetime-Nom1 us
Number of Elements1
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleMICROWAVE
Power Dissipation Limit-Max6 W
Surface MountYes
TechnologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionEND

External links