UM4006DR 600 V, SILICON, PIN DIODE
From Microsemi Corp.
| Status | ACTIVE |
| Application | ATTENUATOR; SWITCHING |
| Breakdown Voltage-Min | 600 V |
| Configuration | SINGLE |
| Diode Capacitance-Max | 3 pF |
| Diode Element Material | SILICON |
| Diode Forward Resistance-Max | 0.5000 ohm |
| Diode Type | PIN DIODE |
| Frequency Band | HIGH FREQUENCY TO S BAND |
| Minority Carrier Lifetime-Nom | 10 us |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | ROUND |
| Package Style | POST/STUD MOUNT |
| Power Dissipation Limit-Max | 18.75 W |
| Technology | POSITIVE-INTRINSIC-NEGATIVE |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
