SG3081J
Common Emitter Transistor Array

From Linfinity Microelectronics

@I(C) (A) (Test Condition)30m
@V(CBO) (V) (Test Condition)10
@V(CE) (V) (Test Condition)5.0
Emitter-Base Diode (Y/N)No
I(C) Abs.(A) Collector Current100m
I(CBO) Max. (A)6.0u
Number of Devices7
P(D) Max.(W) Power Dissipation750m
PackageSO
Semiconductor MaterialSilicon
Type (NPN/PNP)NPN
V(BR)CBO (V)20
V(BR)CEO (V)16
h(FE) Min. Static Current Gain15

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