GC1501-00
KU BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

From Microsemi Corp.

StatusACTIVE
Breakdown Voltage-Min30 V
ConfigurationSINGLE
Diode Cap Tolerance10 %
Diode Capacitance Ratio-Min3.4
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Frequency BandKU BAND
Mfr Package DescriptionROHS COMPLIANT PACKAGE-2
Number of Elements1
Number of Terminals2
Package Body MaterialUNSPECIFIED
Package ShapeSQUARE
Package StyleUNCASED CHIP
Quality Factor-Min3800
Surface MountYes
Terminal FinishGOLD
Terminal FormNO LEAD
Terminal PositionUPPER
Variable Capacitance Diode ClassificationABRUPT

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