EDI784MSV50BB 4M X 8 FLASH 3V PROM, 35 ns, CDSO24
From Microsemi Corp.
Status | ACTIVE |
Access Time-Max (tACC) | 35 ns |
Memory Density | 3.36E7 deg |
Memory IC Type | FLASH 3V PROM |
Memory Width | 8 |
Mfr Package Description | CERAMIC, THINPACK-32/24 |
Number of Functions | 1 |
Number of Terminals | 24 |
Number of Words | 4.19E6 words |
Number of Words Code | 4M |
Operating Mode | SYNCHRONOUS |
Operating Temperature-Max | 125 Cel |
Operating Temperature-Min | -55 Cel |
Organization | 4M X 8 |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Parallel/Serial | PARALLEL |
Supply Voltage-Max (Vsup) | 3.6 V |
Supply Voltage-Min (Vsup) | 3 V |
Supply Voltage-Nom (Vsup) | 3.3 V |
Surface Mount | Yes |
Technology | CMOS |
Temperature Grade | MILITARY |
Terminal Finish | NOT SPECIFIED |
Terminal Form | GULL WING |
Terminal Pitch | 1.27 mm |
Terminal Position | DUAL |