EDI784MSV50BB
4M X 8 FLASH 3V PROM, 35 ns, CDSO24

From Microsemi Corp.

StatusACTIVE
Access Time-Max (tACC)35 ns
Memory Density3.36E7 deg
Memory IC TypeFLASH 3V PROM
Memory Width8
Mfr Package DescriptionCERAMIC, THINPACK-32/24
Number of Functions1
Number of Terminals24
Number of Words4.19E6 words
Number of Words Code4M
Operating ModeSYNCHRONOUS
Operating Temperature-Max125 Cel
Operating Temperature-Min-55 Cel
Organization4M X 8
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)3 V
Supply Voltage-Nom (Vsup)3.3 V
Surface MountYes
TechnologyCMOS
Temperature GradeMILITARY
Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Terminal Pitch1.27 mm
Terminal PositionDUAL

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