APTM20SKM04
372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET

From Microsemi Corp.

StatusACTIVE
Avalanche Energy Rating (Eas)3000 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)372 A
Drain-source On Resistance-Max0.0040 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionMODULE-5
Number of Elements1
Number of Terminals5
Operating ModeENHANCEMENT
Package Body MaterialUNSPECIFIED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)1488 A
Terminal FinishTIN LEAD
Terminal FormUNSPECIFIED
Terminal PositionUPPER
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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