2N6083 VHF BAND, Si, NPN, RF POWER TRANSISTOR
From Microsemi Corp.
| Status | ACTIVE |
| Collector Current-Max (IC) | 4 A |
| Collector-base Capacitance-Max | 130 pF |
| Collector-emitter Voltage-Max | 18 V |
| Configuration | SINGLE WITH BUILT-IN RESISTOR |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND |
| Mfr Package Description | 0.380 INCH, PLASTIC, M135, 4 PIN |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Package Body Material | UNSPECIFIED |
| Package Shape | ROUND |
| Package Style | POST/STUD MOUNT |
| Terminal Finish | TIN LEAD |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transistor Polarity | NPN |
| Transistor Type | RF POWER |
| Transition Frequency-Nom (fT) | 200 MHz |
