1N6080US DIODE GEN PURP 100V 2A G-MELF
From Microsemi Commercial Components Group
| Capacitance @ Vr, F | - |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 10µA @ 100V |
| Datasheets | 1N6073US-1N6071US |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C ~ 155°C |
| Package / Case | SQ-MELF, G |
| Packaging | Bulk |
| Reverse Recovery Time (trr) | 30ns |
| Series | - |
| Speed | Fast Recovery = 200mA (Io) |
| Standard Package | 1 |
| Supplier Device Package | G-MELF (D-5C) |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Voltage - Forward (Vf) (Max) @ If | 1.5V @ 37.7A |
