1N5811US DIODE GEN PURP 150V 3A B-MELF
From Microsemi Commercial Components Group
Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 3A |
Current - Reverse Leakage @ Vr | 5µA @ 50V |
Datasheets | 1N5807,09,11 US/URS |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Surface Mount |
Online Catalog | Standard Diode |
Operating Temperature - Junction | -65°C ~ 175°C |
Package / Case | SQ-MELF, B |
Packaging | Bulk |
Product Photos | 1N6643US |
Reverse Recovery Time (trr) | 30ns |
Series | - |
Speed | Fast Recovery = 200mA (Io) |
Standard Package | 1 |
Supplier Device Package | B, SQ-MELF |
Voltage - DC Reverse (Vr) (Max) | 150V |
Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |