1N4006-TP DIODE GEN PURP 800V 1A DO41
From Micro Commercial Co
Capacitance @ Vr, F | - |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 1A |
Current - Reverse Leakage @ Vr | 5µA @ 800V |
Datasheets | 1N4001 - 1N4007 Datasheet |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Through Hole |
Operating Temperature - Junction | -55°C ~ 150°C |
Other Names | 1N4006-TPMSCT 1N4006TP |
Package / Case | DO-204AL, DO-41, Axial |
Packaging | Cut Tape (CT) |
Product Photos | 2EZ13D5-TP |
Product Training Modules | Diode Handling and Mounting |
Reverse Recovery Time (trr) | 2µs |
Series | - |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Standard Package | 1 |
Supplier Device Package | DO-41 |
Voltage - DC Reverse (Vr) (Max) | 800V |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |