ML40167-276
SILICON, HIGH BARRIER SCHOTTKY, X BAND, MIXER DIODE

From M/A-COM Technology Solutions, Inc.

StatusACTIVE
CW RF Incident Power-Max0.1500 W
ConfigurationSINGLE
Diode Element MaterialSILICON
Diode TypeMIXER DIODE
Frequency BandX BAND
Mfr Package DescriptionCERAMIC, PILL PACKAGE-2
Noise Figure-Max6 dB
Number of Elements1
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleMICROWAVE
Pulse RF Incident Power-Max1 W
Surface MountYes
TechnologySCHOTTKY
Terminal FormFLAT
Terminal PositionDUAL
Type of Schottky BarrierHIGH BARRIER

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