MA40115-276
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE

From M/A-COM Technology Solutions, Inc.

StatusACTIVE
CW RF Incident Power-Max0.1000 W
ConfigurationSINGLE
Diode Element MaterialSILICON
Diode TypeMIXER DIODE
Frequency BandKU BAND
Noise Figure-Max6.5 dB
Number of Elements1
Number of Terminals2
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeROUND
Package StyleMICROWAVE
Pulse RF Incident Power-Max0.5000 W
Surface MountYes
TechnologySCHOTTKY
Terminal FormGULL WING
Terminal PositionUNSPECIFIED
Type of Schottky BarrierLOW BARRIER

External links