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Toshiba.co.jp/MIG20J855E
{"V(BR)GES (V)":"20","Absolute Max. Power Diss. (W)":"60","t(r) Max. (s) Rise time":"200n","V(BR)CES (V)":"600","I(C) Abs.(A) Collector Current":"20","@I(C) (A) (Test Condition)":"20","Circuits Per Package":"1","@V(CES) (V) (Test Condition)":"600","t(f) Max. (s) Fall time.":"300n","I(GES) Max. (A)":"500n","V(CE)sat Max.(V)":"2.8","Package":"MODULE-var","@V(GE) (Test Condition)":"15","@V(GES) (V) (Test Condition)":"20","I(CES) Min. (A)":"1.0m"}...
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