ME4565 4.9 A, 40 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
From Lite-On Electronics, Inc.
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 8.5 mJ |
Channel Type | N-CHANNEL AND P-CHANNEL |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 40 V |
Drain Current-Max (ID) | 4.9 A |
Drain-source On Resistance-Max | 0.0400 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | SOP-8 |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Power Dissipation Ambient-Max | 1.56 W |
Pulsed Drain Current-Max (IDM) | 25 A |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |