Product Datasheet Search Results:
- K4B2G1646C-HCF80
- Samsung Semiconductor Division
- 128M X 16 DDR DRAM, 0.3 ns, PBGA96
Product Details Search Results:
Samsung.com/K4B2G1646C-HCF80
{"Terminal Finish":"NOT SPECIFIED","Terminal Pitch":"0.8000 mm","Access Mode":"MULTI BANK PAGE BURST","Terminal Form":"BALL","Operating Temperature-Max":"85 Cel","Number of Words Code":"128M","Supply Voltage-Nom (Vsup)":"1.5 V","Temperature Grade":"OTHER","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Operating Temperature-Min":"0.0 Cel","Number of Words":"1.34E8 words","Package Body Material":"PLASTIC/EPOXY","Number of Functions":"1","Memory Density":"2.15E9 deg","EU RoHS Compliant":"Ye...
1692 Bytes - 02:52:01, 22 December 2024
Documentation and Support
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K4B2G1646F-BCMA.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BMMA.pdf | 1.77 | 1 | Request | |
DS_K4B2G1646F_BY_M.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BMK0.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BCK0.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BYNB.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BYMA.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BHMA.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BCNB.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BYK0.pdf | 1.77 | 1 | Request | |
K4B2G1646F-BFMA.pdf | 1.77 | 1 | Request |