IXTA1N120P
MOSFET N-CH 1200V 1A TO-263

From IXYS

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C1A (Tc)
DatasheetsIXT(A,P)1N120P
Drain to Source Voltage (Vdss)1200V (1.2kV)
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs17.6nC @ 10V
Input Capacitance (Ciss) @ Vds550pF @ 25V
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PackagingTube
Power - Max63W
Product PhotosTO-263
Rds On (Max) @ Id, Vgs20 Ohm @ 500mA, 10V
SeriesPolarVHV™
Standard Package50
Supplier Device PackageTO-263 (IXTA)
Vgs(th) (Max) @ Id4.5V @ 50µA

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