IS61DDB41M36A-333M3I
1M X 36 DDR SRAM, 0.45 ns, PBGA165

From Integrated Silicon Solution, Inc.

StatusACTIVE
Access Time-Max (tACC)0.4500 ns
Memory Density3.77E7 deg
Memory IC TypeDDR SRAM
Memory Width36
Mfr Package Description15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165
Number of Functions1
Number of Terminals165
Number of Words1.05E6 words
Number of Words Code1M
Operating ModeSYNCHRONOUS
Operating Temperature-Max85 Cel
Operating Temperature-Min-40 Cel
Organization1M X 36
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)1.89 V
Supply Voltage-Min (Vsup)1.71 V
Supply Voltage-Nom (Vsup)1.8 V
Surface MountYes
TechnologyCMOS
Temperature GradeINDUSTRIAL
Terminal FormBALL
Terminal Pitch1 mm
Terminal PositionBOTTOM

External links