OM6215SST
25 A, 200 V, 0.095 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusACTIVE
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)25 A
Drain-source On Resistance-Max0.0950 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, SIP-6
Number of Elements2
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)100 A
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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