IRH254 N-Channel Enhancement MOSFET
From International Rectifier
| @I(D) (A) (Test Condition) | 12 |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 150 |
| C(iss) Max. (F) | 3.4n |
| I(D) Abs. Drain Current (A) | 19 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-204AE |
| V(BR)DSS (V) | 250 |
| g(fs) Max, (S) Trans. conduct, | 7.3 |
| g(fs) Min. (S) Trans. conduct. | 4.8 |
| r(DS)on Max. (Ohms) | 190m |
| t(f) Max. (s) Fall time. | 66n |
| t(r) Max. (s) Rise time | 110n |
