IRFH7932PBF
25 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusDISCONTINUED
Avalanche Energy Rating (Eas)16 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)25 A
Drain-source On Resistance-Max0.0033 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionROHS COMPLIANT, PLASTIC, QFN-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)200 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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