IRFD112 N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From International Rectifier
| Status | DISCONTINUED |
| Channel Type | N-CHANNEL |
| Drain-source On Resistance-Max | 0.8000 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | DIP-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Terminal Finish | TIN LEAD |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE SMALL SIGNAL |
