IRF9540N-002 19 A, 100 V, 0.117 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
From International Rectifier
Status | EOL/LIFEBUY |
Avalanche Energy Rating (Eas) | 430 mJ |
Case Connection | DRAIN |
Channel Type | P-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 19 A |
Drain-source On Resistance-Max | 0.1170 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 76 A |
Terminal Finish | TIN LEAD |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |