IDI8000
NPN Darlington Transistor

From International Devices, Inc.

StatusDiscontinued
@I(C) (A) (Test Condition)5.0
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)90
I(C) Abs.(A) Collector Current15
I(CBO) Max. (A)1.0m
MilitaryN
PackageTO-3
Semiconductor MaterialSilicon
V(BR)CBO (V)150
V(BR)CEO (V)150
h(FE) Min. Static Current Gain100
t(f) Max. (s) Fall time.1.0u
t(r) Max. (s) Rise time500n
t(s) Max. (s) Storage time.3.0u

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