SPD02N80C3ATMA1
MOSFET N-CH 800V 2A 3TO252

From Infineon Technologies

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C2A (Tc)
DatasheetsSPD02N80C3
Drain to Source Voltage (Vdss)800V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs16nC @ 10V
Input Capacitance (Ciss) @ Vds290pF @ 100V
Mounting Type*
Other NamesSP001117754 SPD02N80C3ATMA1TR
Package / Case*
Packaging*
Power - Max42W
Rds On (Max) @ Id, Vgs2.7 Ohm @ 1.2A, 10V
SeriesCoolMOS™
Standard Package2,500
Supplier Device Package*
Vgs(th) (Max) @ Id3.9V @ 120µA

External links