SIGC11T60NCX1SA2 Trans IGBT Chip N-CH 600V 10A 3-Pin Die Wafer
From INFINEON TECHNOLOGIES AG
| Channel Type | N |
| Collector Current (DC) | 10(A) |
| Collector-Emitter Voltage | 600(V) |
| Configuration | Single |
| Gate to Emitter Voltage (Max) | '±20(V) |
| Mounting | Not Required |
| Operating Temperature (Max) | 150C |
| Operating Temperature (Min) | -55C |
| Operating Temperature Classification | Military |
| Package Type | Die |
| Packaging | Wafer |
| Pin Count | 3 |
| Rad Hardened | No |
