IPP030N10N5AKSA1 MOSFET N-Ch 100V 120A TO220-3
From Infineon Technologies
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 17 ns |
| Forward Transconductance - Min | 102 S |
| Id - Continuous Drain Current | 120 A |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 175 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 250 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 112 nC |
| Rds On - Drain-Source Resistance | 3.8 mOhms |
| Rise Time | 15 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 52 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Breakdown Voltage | +/- 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V |
