IPD127N06L G MOSFET N-CH 60V 50A TO-252
From Infineon Technologies
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Datasheets | IPD127N06L G |
Drain to Source Voltage (Vdss) | 60V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 69nC @ 10V |
Input Capacitance (Ciss) @ Vds | 2300pF @ 30V |
Mounting Type | Surface Mount |
Other Names | IPD127N06LGINDKR |
PCN Packaging | Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Packaging | Digi-Reel® |
Power - Max | 136W |
Product Photos | TO252-3 |
Rds On (Max) @ Id, Vgs | 12.7 mOhm @ 50A, 10V |
Series | OptiMOS™ |
Standard Package | 1 |
Supplier Device Package | PG-TO252-3 |
Vgs(th) (Max) @ Id | 2V @ 80µA |